STPSC5H12

Name: STPSC5H12
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件工作温度 -40 ~ 175 °C封装 DPAK

1200 V power Schottky silicon carbide diode

STPSC5H12 主要参数

来源：原厂数据手册

工作温度	-40 ~ 175 °C
封装	DPAK

1 份文档

0 个

暂未收录 STPSC5H12 的替代料信息。

价格与库存以渠道为准

STPSC10065650 V, 10 A low VF power Schottky silicon carbide diode
STPSC10065DLF650 V, 10 A power Schottky silicon carbide diode
STPSC10065-YAutomotive 650 V power Schottky silicon carbide diode
STPSC10C065-YAutomotive 650 V power Schottky silicon carbide diode
STPSC10G065650 V, 10 A high surge silicon carbide power Schottky diode
STPSC10G065-YAutomotive 650 V, 10 A high surge silicon carbide power Schottky diode
STPSC10H065650 V, 10 A high surge silicon carbide power Schottky diode
STPSC10H065BY-TRAutomotive 650 V power Schottky silicon carbide diode
STPSC10H065DLF650 V, 10 A power Schottky silicon carbide diode
STPSC10H065G2650 V, 10 A high surge silicon carbide power Schottky diode
STPSC10H065-YAutomotive 650 V power Schottky silicon carbide diode
STPSC10H121200 V power Schottky silicon carbide diode
STPSC10H12B2-TR1200 V, 10 A, silicon carbide power Schottky diode
STPSC10H12C1200 V power Schottky silicon carbide diode
STPSC10H12G2-TR1200 V, 10 A, silicon carbide power Schottky diode
STPSC10H12G2Y-TRAutomotive 1200 V, 10 A, silicon carbide power Schottky diode
STPSC10H12-YAutomotive grade 1200 V power Schottky silicon carbide diode
STPSC10TH13TIDual 650 V power Schottky silicon carbide diode in series
STPSC12065650 V, 12 A power Schottky silicon carbide diode
STPSC12065-YAutomotive 650 V, 12 A, silicon carbide power Schottky diode

MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
A2F12M12W2-F1ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
GANSPIN611High-voltage half-bridge GaN motor driver
GANSPIN612High-voltage half-bridge GaN motor driver
M2P45M12W2-1LAAutomotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC
MASTERGAN2High power density 600V Half bridge driver with two enhancement mode GaN HEMT
MASTERGAN4L600 V half-bridge enhancement mode GaN HEMT with high voltage driver
SCT011HU75G3AGAutomotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package
SCT025W120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package
SCT040W120G3AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package
STDRIVEG210220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG211220 V high-speed half-bridge gate driver for GaN power switches

STPSC5H12BSTPSC5H12D