STPSC10H12B2-TR

Name: STPSC10H12B2-TR
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件工作温度 -40 ~ 175 °CVDS 1200 VID 10 A封装 DPAK

1200 V, 10 A, silicon carbide power Schottky diode

STPSC10H12B2-TR 主要参数

来源：原厂数据手册

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STPSC10H12B2