SCTW100N120G2AG

状态未知SiC / GaN 宽禁带器件VDS 1200 VID 75 ARDS(on) 30 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mΩ (typ., TJ=25 °C), in an HiP247 package

SCTW100N120G2AG 主要参数

来源：原厂数据手册

1 份文档

0 个

暂未收录 SCTW100N120G2AG 的替代料信息。

价格与库存以渠道为准

暂无

SCTW100N65G2AGAutomotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 100 A in an HiP247 package
SCTW35N65G2VSilicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package
SCTW35N65G2VAGAutomotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
SCTW40N120G2VSilicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package
SCTW40N120G2VAGAutomotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 package
SCTW60N120G2Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247 package
SCTW60N120G2AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
SCTW70N120G2VSilicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 package
SCTW90N65G2VSilicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C) in an HiP247 package
SCTWA20N120Silicon carbide Power MOSFET 1200 V, 20 A, 189 m (typ., TJ=150 °C) N-channel in a HiP247 long leads package
SCTWA30N120Silicon carbide Power MOSFET 1200 V, 80 mΩ typ., 45 A in an HiP247 long leads package
SCTWA35N65G2VSilicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 long leads package

SCTW100N120G2SCTW100N120G2A