SCTWA35N65G2V

Name: SCTWA35N65G2V
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件VDS 650 VID 45 ARDS(on) 55 mΩ

Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 long leads package

SCTWA35N65G2V 主要参数

来源：原厂数据手册

1 份文档

0 个

暂未收录 SCTWA35N65G2V 的替代料信息。

价格与库存以渠道为准

SCTWA35N65G2V-4Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package

MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
MASTERGAN4L600 V half-bridge enhancement mode GaN HEMT with high voltage driver
STPSC40G121200 V, 40 A power Schottky high surge silicon carbide diode
STPSC40G12-YAutomotive 1200 V, 40 A power Schottky high surge silicon carbide diode
STPSC4H065650 V, 4 A high surge silicon carbide power Schottky diode
A2F12M12W2-F1ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
A2F20M65W3-FCACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance
A2U12M12W2-F1CACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET
A2U12M12W2-F2ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
GANSPIN611High-voltage half-bridge GaN motor driver
GANSPIN612High-voltage half-bridge GaN motor driver
M2P45M12W2-1LAAutomotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC

SCTWA35N65G2