SCTW40N120G2V

Name: SCTW40N120G2V
Brand: STMicroelectronics

状态未知SiC / GaN 宽禁带器件VDS 1200 VID 36 ARDS(on) 62 mΩ

Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package

SCTW40N120G2V 主要参数

来源：原厂数据手册

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价格与库存以渠道为准

SCTW40N120G2VAGAutomotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 package

SCTW60N120G2Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247 package
SCTW60N120G2AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
SCTW70N120G2VSilicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 package
SCTW90N65G2VSilicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C) in an HiP247 package
SCTWA20N120Silicon carbide Power MOSFET 1200 V, 20 A, 189 m (typ., TJ=150 °C) N-channel in a HiP247 long leads package
SCTWA30N120Silicon carbide Power MOSFET 1200 V, 80 mΩ typ., 45 A in an HiP247 long leads package
SCTWA35N65G2VSilicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 long leads package
SCTWA35N65G2V-4Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package
SCTWA40N120G2AGAutomotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
SCTWA40N120G2VSilicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package
SCTWA40N120G2V-4Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247-4 package
SCTWA40N12G24AGAutomotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247‑4 package

SCTW40N120G2