SCTWA40N120G2V-4

Name: SCTWA40N120G2V-4
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件VDS 1200 VID 36 ARDS(on) 62 mΩ

Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247-4 package

SCTWA40N120G2V-4 主要参数

来源：原厂数据手册

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价格与库存以渠道为准

SCTWA40N120G2AGAutomotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
SCTWA40N120G2VSilicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package

SCTWA40N12G24AGAutomotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247‑4 package
SCTWA50N120Silicon carbide Power MOSFET 1200 V, 52 mΩ typ., 65 A in an HiP247 long leads package
SCTWA60N120G2-4Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247-4 package
SCTWA60N120G2AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
SCTWA60N12G2-4AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247-4 package
SCTWA70N120G2VSilicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 long leads package
SCTWA70N120G2V-4Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247‑4 package
SCTWA90N65G2VSilicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247 long leads package
SCTWA90N65G2V-4Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package
SH70M12W3AGAutomotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mΩ typ., 28 A SiC Power MOSFET
STDRIVEG210220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG211220 V high-speed half-bridge gate driver for GaN power switches