SCTWA60N120G2-4

Name: SCTWA60N120G2-4
Brand: STMicroelectronics

量产SiC / GaN 宽禁带器件VDS 1200 VID 60 ARDS(on) 35 mΩ

Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247-4 package

SCTWA60N120G2-4 主要参数

来源：原厂数据手册

1 份文档

0 个

暂未收录 SCTWA60N120G2-4 的替代料信息。

价格与库存以渠道为准

SCTWA60N120G2AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
SCTWA60N12G2-4AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247-4 package

SCTWA70N120G2VSilicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 long leads package
SCTWA70N120G2V-4Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247‑4 package
SCTWA90N65G2VSilicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247 long leads package
SCTWA90N65G2V-4Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package
SH70M12W3AGAutomotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mΩ typ., 28 A SiC Power MOSFET
STDRIVEG210220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG211220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG212220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG600High voltage half-bridge gate driver for GaN transistors
STDRIVEG600WHigh voltage half-bridge gate driver for GaN transistors
STDRIVEG610High voltage and high-speed half-bridge gate driver for GaN power switches
STDRIVEG611High voltage and high-speed half-bridge gate driver for GaN power switches