SCTW35N65G2VAG

量产SiC / GaN 宽禁带器件VDS 650 VID 45 ARDS(on) 55 mΩ

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package

SCTW35N65G2VAG 主要参数

来源：原厂数据手册

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价格与库存以渠道为准

SCTW35N65G2VSilicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package

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SCTWA30N120Silicon carbide Power MOSFET 1200 V, 80 mΩ typ., 45 A in an HiP247 long leads package
SCTWA35N65G2VSilicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 long leads package
SCTWA35N65G2V-4Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package
SCTWA40N120G2AGAutomotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
SCTWA40N120G2VSilicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package

SCTW35N65G2SCTW35N65G2VSCTW35N65G2VA