SCTW100N65G2AG

量产SiC / GaN 宽禁带器件VDS 650 VID 100 ARDS(on) 20 mΩ

Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 100 A in an HiP247 package

SCTW100N65G2AG 主要参数

来源：原厂数据手册

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SCTW100N65G2SCTW100N65G2A