NXH004P120M3F2PTHG

量产SiC / GaN 宽禁带器件RDS(on) 4 mΩ

Silicon Carbide (SiC) Module - EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

NXH004P120M3F2PTHG 主要参数

来源：原厂数据手册

RDS(on)	4 mΩ

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NXH004P120M3F2PNGSilicon Carbide (SiC) MOSFET
NXH004P120M3F2PTNGSilicon Carbide (SiC) Module - EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

NXH006P120M3F1PGSilicon Carbide (SiC) Module
NXH006P120M3F1PNGSilicon Carbide (SiC) Module
NXH006P120M3F2Silicon Carbide (SiC) Module ‐ EliteSiC, 6 mohm, 1200 V, SiC M3 MOSFET, 2‐PACK Half Bridge Topology, F2 Package with HPS DBC
NXH006P120MNF2Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
NXH007F120M3F2Silicon Carbide (SiC) Module – EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package
NXH008P120M3F1Silicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
NXH008P120M3F1PSilicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, 2‐PACK Half Bridge Topology, F1 Package
NXH008T120M3F2Silicon Carbide (SiC) Module
NXH010P120M3F1Silicon Carbide (SiC) Module – 10 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
NXH010P120MNF1Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
NXH010P90MNF1Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M2 MOSFET, 900 V, 2-PACK Half Bridge Topology, F1 Package
NXH011F120M3F2PTSilicon Carbide (SiC) Module – EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

NXH004P120M3F2NXH004P120M3F2PNXH004P120M3F2PTNXH004P120M3F2PTH