NXH011F120M3F2PT

状态未知SiC / GaN 宽禁带器件RDS(on) 11 mΩ

Silicon Carbide (SiC) Module – EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

NXH011F120M3F2PT 主要参数

来源：原厂数据手册

RDS(on)	11 mΩ

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