NXH011T120M3F2

量产SiC / GaN 宽禁带器件RDS(on) 11 mΩ

Silicon Carbide (SiC) Module – 11 mohm SiC M3S MOSFET, 1200 V, TNPC Topology, F2 Package

NXH011T120M3F2 主要参数

来源：原厂数据手册

RDS(on)	11 mΩ

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