NXH006P120M3F2

量产SiC / GaN 宽禁带器件RDS(on) 6 mΩ

Silicon Carbide (SiC) Module ‐ EliteSiC, 6 mohm, 1200 V, SiC M3 MOSFET, 2‐PACK Half Bridge Topology, F2 Package with HPS DBC

NXH006P120M3F2 主要参数

来源：原厂数据手册

RDS(on)	6 mΩ

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NDSH20120C-F155Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D3, TO-247-2L

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