NXH010P120MNF1

量产SiC / GaN 宽禁带器件RDS(on) 10 mΩ

Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

NXH010P120MNF1 主要参数

来源：原厂数据手册

RDS(on)	10 mΩ

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