NXH010P120M3F1

量产SiC / GaN 宽禁带器件RDS(on) 10 mΩ

Silicon Carbide (SiC) Module – 10 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

NXH010P120M3F1 主要参数

来源：原厂数据手册

RDS(on)	10 mΩ

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价格与库存以渠道为准

NXH010P120MNF1Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

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NXH015F120M3F1Silicon Carbide (SiC) Module – 15 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package
NXH015P120M3F1Silicon Carbide (SiC) Module – 15 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
NXH020F120MNF1Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package
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NXH030P120M3F1Silicon Carbide (SiC) Module – 30 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

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