NXH008P120M3F1

量产SiC / GaN 宽禁带器件RDS(on) 8 mΩ

Silicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

NXH008P120M3F1 主要参数

来源：原厂数据手册

RDS(on)	8 mΩ

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NXH008P120M3F1PSilicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, 2‐PACK Half Bridge Topology, F1 Package

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