NXH003P120M3F2PTNG

量产SiC / GaN 宽禁带器件RDS(on) 3 mΩ

Silicon Carbide (SiC) Module - EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

NXH003P120M3F2PTNG 主要参数

来源：原厂数据手册

RDS(on)	3 mΩ

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NXH003P120M3F2NXH003P120M3F2PNXH003P120M3F2PTNXH003P120M3F2PTN