STPSC4G065
ActiveSiC / GaN Wide-Bandgap工作温度 -55 ~ 175 °CVDS 650 VID 4 A
650 V, 4 A high surge silicon carbide power Schottky diode
- Manufacturer
- STMicroelectronics
- Datasheet
- 10 pages · 528 KB
- Website
- www.st.com
STPSC4G065 Key Specifications
Source: manufacturer datasheet| 工作温度 | -55 ~ 175 °C |
|---|---|
| VDS | 650 V |
| ID | 4 A |
Technical Documents
1 documentDatasheet
Alternatives
0 partsNo alternatives listed for STPSC4G065 yet.