STPSC40G12-Y

ActiveSiC / GaN Wide-Bandgap工作温度 -55 ~ 175 °CVDS 1200 VID 40 A封装 DO-247

Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode

Manufacturer
STMicroelectronics
Package
DO-247
Datasheet
10 pages · 488 KB

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STPSC40G12-Y Key Specifications

Source: manufacturer datasheet
工作温度-55 ~ 175 °C
VDS1200 V
ID40 A
封装DO-247

Technical Documents

1 document

Datasheet

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