STPSC40H12C-Y

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °C封装 TO-247

40 A 1200 V power Schottky silicon carbide diode

Manufacturer
STMicroelectronics
Package
TO-247
Datasheet
10 pages · 251 KB

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STPSC40H12C-Y Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 175 °C
封装TO-247

Technical Documents

1 document

Datasheet

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