STPSC4H065DLF

ActiveSiC / GaN Wide-Bandgap工作温度 -40 ~ 175 °C封装 POWERFLAT8X8

650 V power Schottky silicon carbide diode

Manufacturer
STMicroelectronics
Package
POWERFLAT8X8
Datasheet
12 pages · 377 KB

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STPSC4H065DLF Key Specifications

Source: manufacturer datasheet
工作温度-40 ~ 175 °C
封装POWERFLAT8X8

Technical Documents

1 document

Datasheet

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