SCTW60N120G2AG

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 52 ARDS(on) 45 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package

Manufacturer
STMicroelectronics
Datasheet
11 pages · 192 KB

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SCTW60N120G2AG Key Specifications

Source: manufacturer datasheet
VDS1200 V
ID52 A
RDS(on)45 mΩ

Technical Documents

1 document

Datasheet

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