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SCTWA40N120G2V-4

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 36 ARDS(on) 62 mΩ

Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247-4 package

Manufacturer: STMicroelectronics
Datasheet: 12 pages · 198 KB
Website: www.st.com

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SCTWA40N120G2V-4 Key Specifications

Source: manufacturer datasheet

VDS	1200 V
ID	36 A
RDS(on)	62 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCTWA40N120G2V-4 - Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247-4 package
12 pages198 KB BookmarkedST-SCTWA40N120G2V4.pdf

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