SCTWA90N65G2V-4

ActiveSiC / GaN Wide-BandgapVDS 650 VID 119 ARDS(on) 18 mΩ

Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package

Manufacturer
STMicroelectronics
Datasheet
12 pages · 469 KB

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SCTWA90N65G2V-4 Key Specifications

Source: manufacturer datasheet
VDS650 V
ID119 A
RDS(on)18 mΩ

Technical Documents

1 document

Datasheet

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