Skip to main content

SCTWA50N120

UnknownSiC / GaN Wide-BandgapVDS 1200 VID 65 ARDS(on) 52 mΩ

Silicon carbide Power MOSFET 1200 V, 52 mΩ typ., 65 A in an HiP247 long leads package

Manufacturer: STMicroelectronics
Datasheet: 10 pages · 468 KB · Rev 4
Website: www.st.com

Wrong information or a copyright issue? Let us know

SCTWA50N120 Key Specifications

Source: manufacturer datasheet

VDS	1200 V
ID	65 A
RDS(on)	52 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCTWA50N120 - Silicon carbide Power MOSFET 1200 V, 52 mΩ typ., 65 A in an HiP247 long leads package
10 pages468 KBRev 42025-02-01 BookmarkedST-SCTWA50N120.pdf

Alternatives

0 parts

No alternatives listed for SCTWA50N120 yet.

Where to buy

Prices and stock are set by each distributor

Same Series

None

More from STMicroelectronics

SCTWA60N120G2-4Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247-4 package
SCTWA60N120G2AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
SCTWA60N12G2-4AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247-4 package
SCTWA70N120G2VSilicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 long leads package
SCTWA70N120G2V-4Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247‑4 package
SCTWA90N65G2VSilicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247 long leads package
SCTWA90N65G2V-4Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package
SH70M12W3AGAutomotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mΩ typ., 28 A SiC Power MOSFET
STDRIVEG210220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG211220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG212220 V high-speed half-bridge gate driver for GaN power switches
STDRIVEG600High voltage half-bridge gate driver for GaN transistors