SCTW90N65G2V

UnknownSiC / GaN Wide-BandgapVDS 650 VID 119 ARDS(on) 18 mΩ

Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C) in an HiP247 package

Manufacturer
STMicroelectronics
Datasheet
12 pages · 397 KB · Rev 5

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SCTW90N65G2V Key Specifications

Source: manufacturer datasheet
VDS650 V
ID119 A
RDS(on)18 mΩ

Technical Documents

1 document

Datasheet

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