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SCTWA35N65G2V-4

ActiveSiC / GaN Wide-BandgapVDS 650 VID 45 ARDS(on) 55 mΩ

Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package

Manufacturer: STMicroelectronics
Datasheet: 12 pages · 190 KB
Website: www.st.com

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SCTWA35N65G2V-4 Key Specifications

Source: manufacturer datasheet

VDS	650 V
ID	45 A
RDS(on)	55 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCTWA35N65G2V-4 - Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package
12 pages190 KB BookmarkedST-SCTWA35N65G2V4.pdf

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Same Series

SCTWA35N65G2VSilicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 long leads package

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