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SCTWA20N120

UnknownSiC / GaN Wide-BandgapVDS 1200 VID 20 A

Silicon carbide Power MOSFET 1200 V, 20 A, 189 m (typ., TJ=150 °C) N-channel in a HiP247 long leads package

Manufacturer: STMicroelectronics
Datasheet: 12 pages · 686 KB · Rev 1
Website: www.st.com

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SCTWA20N120 Key Specifications

Source: manufacturer datasheet

VDS	1200 V
ID	20 A

Technical Documents

1 document

Datasheet

Silicon carbide Power MOSFET 1200 V, 20 A, 189 m (typ., TJ=150 °C) N-channel in a HiP247 long leads package
12 pages686 KBRev 12016-06-01ST-SCTWA20N120.pdf

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