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SCTW60N120G2

UnknownSiC / GaN Wide-BandgapVDS 1200 VID 60 ARDS(on) 35 mΩ

Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247 package

Manufacturer: STMicroelectronics
Datasheet: 12 pages · 196 KB · Rev 3
Website: www.st.com

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SCTW60N120G2 Key Specifications

Source: manufacturer datasheet

VDS	1200 V
ID	60 A
RDS(on)	35 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCTW60N120G2 - Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247 package
12 pages196 KBRev 32021-06-01 BookmarkedST-SCTW60N120G2.pdf

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Same Series

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