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SCTW70N120G2V

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 91 ARDS(on) 21 mΩ

Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 package

Manufacturer: STMicroelectronics
Datasheet: 12 pages · 205 KB
Website: www.st.com

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SCTW70N120G2V Key Specifications

Source: manufacturer datasheet

VDS	1200 V
ID	91 A
RDS(on)	21 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCTW70N120G2V - Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 package
12 pages205 KB BookmarkedST-SCTW70N120G2V.pdf

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Order codes / Aliases

SCTW70N120G2