SCTW100N65G2AG

ActiveSiC / GaN Wide-BandgapVDS 650 VID 100 ARDS(on) 20 mΩ

Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 100 A in an HiP247 package

Manufacturer
STMicroelectronics
Datasheet
11 pages · 228 KB

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SCTW100N65G2AG Key Specifications

Source: manufacturer datasheet
VDS650 V
ID100 A
RDS(on)20 mΩ

Technical Documents

1 document

Datasheet

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