SCTW35N65G2VAG

UnknownSiC / GaN Wide-BandgapVDS 650 VID 45 ARDS(on) 55 mΩ

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package

Manufacturer
STMicroelectronics
Datasheet
12 pages · 201 KB · Rev 3

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SCTW35N65G2VAG Key Specifications

Source: manufacturer datasheet
VDS650 V
ID45 A
RDS(on)55 mΩ

Technical Documents

1 document

Datasheet

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