SCTW100N120G2AG

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 75 ARDS(on) 30 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mΩ (typ., TJ=25 °C), in an HiP247 package

Manufacturer
STMicroelectronics
Datasheet
11 pages · 213 KB

Wrong information or a copyright issue? Let us know

SCTW100N120G2AG Key Specifications

Source: manufacturer datasheet
VDS1200 V
ID75 A
RDS(on)30 mΩ

Technical Documents

1 document

Datasheet

Alternatives

0 parts
No alternatives listed for SCTW100N120G2AG yet.