SCTH70N120G2V-7
ActiveSiC / GaN Wide-BandgapVDS 1200 VID 90 ARDS(on) 21 mΩ
Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 90 A in an H²PAK‑7 package
- Manufacturer
- STMicroelectronics
- Datasheet
- 14 pages · 373 KB
- Website
- www.st.com
SCTH70N120G2V-7 Key Specifications
Source: manufacturer datasheet| VDS | 1200 V |
|---|---|
| ID | 90 A |
| RDS(on) | 21 mΩ |
Technical Documents
1 documentDatasheet
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