SCTHS250N65G3

ActiveSiC / GaN Wide-BandgapVDS 650 VID 237 ARDS(on) 6.7 mΩ

Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 237 A in a STPAK package

Manufacturer
STMicroelectronics
Datasheet
12 pages · 633 KB

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SCTHS250N65G3 Key Specifications

Source: manufacturer datasheet
VDS650 V
ID237 A
RDS(on)6.7 mΩ

Technical Documents

1 document

Datasheet

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