SCTHC250N12G3AG

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 239 ARDS(on) 8.5 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK high creepage package

Manufacturer
STMicroelectronics
Datasheet
11 pages · 1.2 MB

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SCTHC250N12G3AG Key Specifications

Source: manufacturer datasheet
VDS1200 V
ID239 A
RDS(on)8.5 mΩ

Technical Documents

1 document

Datasheet

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