Skip to main content

SCTHS200N120G3AG

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 170 ARDS(on) 9.3 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mΩ typ., 170 A in a STPAK package

Manufacturer: STMicroelectronics
Datasheet: 11 pages · 612 KB
Website: www.st.com

Wrong information or a copyright issue? Let us know

SCTHS200N120G3AG Key Specifications

Source: manufacturer datasheet

VDS	1200 V
ID	170 A
RDS(on)	9.3 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCTHS200N120G3AG - Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mΩ typ., 170 A in a STPAK package
11 pages612 KB BookmarkedST-SCTHS200N120G3AG.pdf

Alternatives

0 parts

No alternatives listed for SCTHS200N120G3AG yet.

Where to buy

Prices and stock are set by each distributor

Same Series

None

More from STMicroelectronics

MASTERGAN4High power density 600V half-bridge driver with two enhancement mode GaN HEMT
STPSC40G121200 V, 40 A power Schottky high surge silicon carbide diode
STPSC4H065650 V, 4 A high surge silicon carbide power Schottky diode
A2F12M12W2-F1ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
A2F20M65W3-FCACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance
A2U12M12W2-F1CACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET
A2U12M12W2-F2ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC
GANSPIN611High-voltage half-bridge GaN motor driver
GANSPIN612High-voltage half-bridge GaN motor driver
M2P45M12W2-1LAAutomotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC
M2TP80M12W2-2LAAutomotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC
MASTERGAN1High power density 600V Half bridge driver with two enhancement mode GaN HEMT

Order codes / Aliases

SCTHS200N120G3SCTHS200N120G3A