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SCTL35N65G2V

ActiveSiC / GaN Wide-BandgapVDS 650 VID 40 ARDS(on) 55 mΩ封装 POWERFLAT8X8

Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 40 A in a PowerFLAT 8x8 HV package

Manufacturer: STMicroelectronics
Package: POWERFLAT8X8
Datasheet: 14 pages · 317 KB
Website: www.st.com

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SCTL35N65G2V Key Specifications

Source: manufacturer datasheet

VDS	650 V
ID	40 A
RDS(on)	55 mΩ
封装	POWERFLAT8X8

Technical Documents

1 document

Datasheet

Datasheet - SCTL35N65G2V - Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 40 A in a PowerFLAT 8x8 HV package
14 pages317 KB BookmarkedST-SCTL35N65G2V.pdf

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Order codes / Aliases

SCTL35N65G2