SCTH90N65G2V-7

ActiveSiC / GaN Wide-BandgapVDS 650 VID 116 ARDS(on) 18 mΩ

Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package

Manufacturer
STMicroelectronics
Datasheet
14 pages · 612 KB

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SCTH90N65G2V-7 Key Specifications

Source: manufacturer datasheet
VDS650 V
ID116 A
RDS(on)18 mΩ

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Datasheet

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