SCTH35N65G2V-7
ActiveSiC / GaN Wide-BandgapVDS 650 VID 45 ARDS(on) 55 mΩ
Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package
- Manufacturer
- STMicroelectronics
- Datasheet
- 15 pages · 372 KB
- Website
- www.st.com
SCTH35N65G2V-7 Key Specifications
Source: manufacturer datasheet| VDS | 650 V |
|---|---|
| ID | 45 A |
| RDS(on) | 55 mΩ |
Technical Documents
1 documentDatasheet
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