SCTH40N120G2V7AG
ActiveSiC / GaN Wide-BandgapVDS 1200 VID 33 ARDS(on) 75 mΩ
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an H²PAK-7 package
- Manufacturer
- STMicroelectronics
- Datasheet
- 14 pages · 371 KB
- Website
- www.st.com
SCTH40N120G2V7AG Key Specifications
Source: manufacturer datasheet| VDS | 1200 V |
|---|---|
| ID | 33 A |
| RDS(on) | 75 mΩ |
Technical Documents
1 documentDatasheet
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