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SCTH60N120G2-7

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 60 ARDS(on) 35 mΩ

Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package

Manufacturer: STMicroelectronics
Datasheet: 14 pages · 349 KB
Website: www.st.com

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SCTH60N120G2-7 Key Specifications

Source: manufacturer datasheet

VDS	1200 V
ID	60 A
RDS(on)	35 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCTH60N120G2-7 - Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package
14 pages349 KB BookmarkedST-SCTH60N120G27.pdf

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Same Series

SCTH60N120G2-7AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package

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