SCT50N120
UnknownSiC / GaN Wide-BandgapVDS 1200 VID 65 ARDS(on) 52 mΩ
Silicon carbide Power MOSFET 1200 V, 52 mΩ typ., 65 A in an HiP247 package
- Manufacturer
- STMicroelectronics
- Datasheet
- 11 pages · 462 KB · Rev 5
- Website
- www.st.com
SCT50N120 Key Specifications
Source: manufacturer datasheet| VDS | 1200 V |
|---|---|
| ID | 65 A |
| RDS(on) | 52 mΩ |
Technical Documents
1 documentDatasheet
Alternatives
0 partsNo alternatives listed for SCT50N120 yet.