SCTH100N120G2-AG

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 75 ARDS(on) 30 mΩ

Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

Manufacturer
STMicroelectronics
Datasheet
14 pages · 435 KB

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SCTH100N120G2-AG Key Specifications

Source: manufacturer datasheet
VDS1200 V
ID75 A
RDS(on)30 mΩ

Technical Documents

1 document

Datasheet

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