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SCT30N120

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 45 ARDS(on) 80 mΩ

Silicon carbide Power MOSFET 1200 V, 80 mΩ typ., 45 A in an HiP247 package

Manufacturer: STMicroelectronics
Datasheet: 13 pages · 580 KB
Website: www.st.com

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SCT30N120 Key Specifications

Source: manufacturer datasheet

VDS	1200 V
ID	45 A
RDS(on)	80 mΩ

Technical Documents

1 document

Datasheet

Datasheet - SCT30N120 - Silicon carbide Power MOSFET 1200 V, 80 mΩ typ., 45 A in an HiP247 package
13 pages580 KB BookmarkedST-SCT30N120.pdf

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