SiC / GaN Wide-Bandgap

651 parts

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SCT060W75G3-4AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 750 V, 60 mΩ typ., 30 A in an HiP247-4 package
Manufacturers STMicroelectronicsVDS 750 VID 30 A
1 document
SCT070H120G3AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package
Manufacturers STMicroelectronicsVDS 1200 VID 30 A
1 document
SCT070HU120G3AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HU3PAK package
Manufacturers STMicroelectronicsVDS 1200 VID 30 A
1 document
SCT070W120G3-4AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HiP247-4 package
Manufacturers STMicroelectronicsVDS 1200 VID 30 A
1 document
SCT070W120G3AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HiP247 package
Manufacturers STMicroelectronicsVDS 1200 VID 30 A
1 document
SCT1000N170AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package
Manufacturers STMicroelectronicsVDS 1700 VID 7 A
1 document
SCT10N120AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package -
Manufacturers STMicroelectronicsVDS 1200 VID 12 A
1 document
SCT20N120AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package
Manufacturers STMicroelectronicsVDS 1200 VID 20 A
1 document
SCT20N170AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mΩ typ., 43 A in an HiP247 package
Manufacturers STMicroelectronicsVDS 1700 VID 43 A
1 document
SCTH100N120G2-AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
Manufacturers STMicroelectronicsVDS 1200 VID 75 A
1 document
SCTH100N65G2-7AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 95 A in an H²PAK-7 package
Manufacturers STMicroelectronicsVDS 650 VID 95 A
1 document
SCTH35N65G2V-7AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package
Manufacturers STMicroelectronicsVDS 650 VID 45 A
1 document
SCTH40N120G2V7AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an H²PAK-7 package
Manufacturers STMicroelectronicsVDS 1200 VID 33 A
1 document
SCTH60N120G2-7AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package
Manufacturers STMicroelectronicsVDS 1200 VID 55 A
1 document
SCTHC250N120G3AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK high creepage package
Manufacturers STMicroelectronicsVDS 1200 VID 239 A
1 document
SCTHC250N12G3AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK high creepage package
Manufacturers STMicroelectronicsVDS 1200 VID 239 A
1 document
SCTHCT250N12G3AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK high creepage package
Manufacturers STMicroelectronicsVDS 1200 VID 239 A
1 document
SCTHS200N120G3AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mΩ typ., 170 A in a STPAK package
Manufacturers STMicroelectronicsVDS 1200 VID 170 A
1 document
SCTHS250N120G3AGAutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK package
Manufacturers STMicroelectronicsVDS 1200 VID 239 A
1 document
SCTHS250N65G3AutomotiveAEC-Q101
Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 237 A in a STPAK package
Manufacturers STMicroelectronicsVDS 650 VID 237 A
1 document