SCT20N120AG

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 20 ARDS(on) 189 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package

SCT20N120AG Key Specifications

Source: manufacturer datasheet

1 document

0 parts

No alternatives listed for SCT20N120AG yet.

Prices and stock are set by each distributor

SCT20N120Silicon carbide Power MOSFET 1200 V, 169 mΩ typ., 20 A in an HiP247 package
SCT20N120HSilicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package
SCT20N170AGAutomotive-grade silicon carbide Power MOSFET 1700 V, 64 mΩ typ., 43 A in an HiP247 package

SCT20N120SCT20N120A