SCT20N120H

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 20 ARDS(on) 189 mΩ

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package

Manufacturer
STMicroelectronics
Datasheet
16 pages · 681 KB

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SCT20N120H Key Specifications

Source: manufacturer datasheet
VDS1200 V
ID20 A
RDS(on)189 mΩ

Technical Documents

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Datasheet

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