SCT10N120AG

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 12 ARDS(on) 520 mΩ

Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package -

Manufacturer
STMicroelectronics
Datasheet
14 pages · 234 KB

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SCT10N120AG Key Specifications

Source: manufacturer datasheet
VDS1200 V
ID12 A
RDS(on)520 mΩ

Technical Documents

1 document

Datasheet

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