SCT10N120

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 12 ARDS(on) 500 mΩ

Silicon carbide Power MOSFET 1200 V, 500 mΩ typ., 12 A in an HiP247 package

Manufacturer
STMicroelectronics
Datasheet
12 pages · 475 KB

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SCT10N120 Key Specifications

Source: manufacturer datasheet
VDS1200 V
ID12 A
RDS(on)500 mΩ

Technical Documents

1 document

Datasheet

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